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US 2014/0231880 A1Published application
Imaging sensor
AssigneeThe Secretary of State for Deffence
InventorChristopher David Burgess
Life of this patent
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Abstract
An imaging sensor of the charge transfer type that limits the transmission of radiation from high intensity light sources. The invention addresses potential saturation levels during exposure or stare time and so saturation is never achieved, this provides for a wider dynamic range.
Claims8
An imaging sensor comprising:
- a pixel electrode;
- a layer of photo sensitive material;
- a layer of semi conductor material;
- a second electrode;
- means to apply a potential difference across the semi conductor material and the photo sensitive material during operation;
- wherein the layer of photosensitive material is positioned between the pixel electrode and the layer of semi conductor material, the photoresitivity of the photo sensitive material decreasing on exposure to light such as to increase the sensor's dynamic range.
3 more elements
An imaging sensor substantially as herein described with reference to FIGS. 2 and 4 to 9 of the accompanying drawings.
Dependencies are inferred from the claim text.