Collector-up bipolar junction transistors in bicmos technology
AssigneeInternational Business Machines Corporation
InventorsJames W. Adkisson, David L. Harame, Qizhi Liu
Life of this patent
Estimating the term…
Abstract
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An emitter is formed in a device region defined in a substrate. An intrinsic base is formed on the emitter. A collector is formed that is separated from the emitter by the intrinsic base. The collector includes a semiconductor material having an electronic bandgap greater than an electronic bandgap of a semiconductor material of the device region.
Claims10
A device structure for a bipolar junction transistor, the device structure comprising:
- a device region comprised of a first semiconductor material having a first electronic bandgap;
- an emitter in the device region;
- an intrinsic base on the emitter;
- and
- a collector separated from the emitter by the intrinsic base, the collector comprised of a second semiconductor material having a second electronic bandgap greater than the first electronic bandgap.
A hardware description language (HDL) design structure encoded on a machine-readable data storage medium, the HDL design structure comprising elements that when processed in a computer-aided design system generates a machine-executable representation of a bipolar junction transistor, the HDL design structure comprising:
- a device region in a substrate;
- an emitter in the device region;
- an intrinsic base on the emitter;
- and
- a collector separated from the emitter by the intrinsic base, the collector comprised of a second semiconductor material having a second electronic bandgap greater than the first electronic bandgap.
Dependencies are inferred from the claim text.