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AssigneeDenso Corporation
InventorsShinichi Hoshi, Shoji Mizuno, Tetsu Kachi, Tsutomu Uesugi, Kazuyoshi Tomita, Kenji Ito
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A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.
A semiconductor device comprising:
Dependencies are inferred from the claim text.