Method for inducing strain in finfet channels
AssigneeTaiwan Semiconductor Manfacturing Company, Ltd.
InventorsJean-Pierre Colinge, Kuo-Cheng Ching
Life of this patent
Estimating the term…
Abstract
FinFETs in which a swelled material within the fin, typically an oxide of the fin semiconductor, causes strain that significantly increases charge carrier mobility within the FinFET channel. The concept can be applied to either p-type or n-type FinFETs. For p-type FinFETs the swelled material is positioned underneath the source and drain regions. For n-type FinFETs the swelled material is positioned underneath the channel region. The swelled material can be used with or without strain-inducing epitaxy on the source and drain areas and can provide greater strain than is achievable by strain-inducing epitaxy alone.
Claims20
An integrated circuit device, comprising:
- a p-type FinFET having a source, a drain, and a channel;
- and
- swelled material underneath the source and drain, the swelled material causing compressive strain within the channel that significantly increases charge carrier mobility within the channel.
An integrated circuit device, comprising:
- an n-type FinFET having a source, a drain, and a channel;
- and
- swelled material underneath the channel, the swelled material causing tensile strain within the channel that significantly increases charge carrier mobility within the channel.
13-20. (canceled)
An integrated circuit device, comprising:
- a p-type FinFET having a p-type source, a p-type drain, and a n-type channel made of a first semiconductor material;
- an n-type FinFET having a n-type source, a n-type drain, and a p-type channel made of the first semiconductor material;
- and
- swelled regions of either the first semiconductor material or a second semiconductor material which are arranged underneath the p-type source, the p-type drain, and the p-type channel, the swelled regions causing compressive strain within the n-type channel and tensile strain within the p-type channel.
Dependencies are inferred from the claim text.