Semiconductor structure having silicon devices, column iii-nitride devices, and column iii-non-nitride or column ii-vi devices
AssigneeRaytheon Company
InventorWilliam E. Hoke
Life of this patent
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Abstract
A semiconductor structure having a silicon substrate having a <111> crystallographic orientation, an insulating layer disposed over a first portion of the silicon substrate, a silicon layer having a <100> orientation disposed over the insulating layer, and a non-nitride column semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or column II-VI semiconductor layer being in direct contact with a second portion of the silicon substrate. A column III-nitride is disposed on the surface of the third portion of the substrate.
Claims14
A semiconductor structure comprising:
- a silicon substrate having a <111> crystallographic orientation;
- an insulating layer disposed over a first portion of the silicon substrate;
- a silicon layer having a <100> orientation disposed over the insulating layer,
- a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or the column II-VI semiconductor layer being in a direct contact with a second portion of the silicon substrate.
A semiconductor structure comprising:
- a silicon substrate having a <111> crystallographic orientation;
- an insulating layer disposed over a first portion of the silicon substrate;
- a silicon layer having a <100> orientation disposed over the insulating layer,
- a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or the column II-VI semiconductor layer being in a direct contact with a second portion of the silicon substrate, the column III-V semiconductor layer being column III-As, column III-P, column III-Sb, or column III alloys of As, P, Sb device and the column II-VI semiconductor being a column II-O, column II-S, column II-Se, column II-Te or column II alloys of O, S, Se, and Te.
The semiconductor structure recited in claim 9 wherein the silicon layer has a transistor device formed therein.
Dependencies are inferred from the claim text.