Diode and semiconductor device including built-in diode

A semiconductor device comprising:

• a drain electrode;
• a drain region made of a first conductivity type semiconductor;
• a drift region made of the first conductivity type semiconductor;
• a body region made of a second conductivity type semiconductor;
• a source region made of the first conductivity type semiconductor;
• a source electrode made of metal;
• a gate electrode opposite to the body region between the source region and the drift region via an insulating film;
• a barrier region formed between the drift region and the body region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region;
• a pillar region formed so as to extend between the barrier region and the source electrode and contact the barrier region, and made of a first conductivity type semiconductor;
• and
• a barrier height adjusting region formed so as to be located between the pillar region and the source electrode, and contact the pillar region and the source electrode,
• wherein the barrier height adjusting region includes at least one component selected from the group consisting of the second conductivity type semiconductor having a concentration lower than that of the body region, the first conductivity type semiconductor having a concentration lower than that of the pillar region, and an i-type semiconductor, and
• wherein the barrier height adjusting region and the source electrode are connected through a Schottky junction.

A diode comprising:

• a cathode electrode;
• a cathode region made of a first conductivity type semiconductor;
• a drift region made of the first conductivity type semiconductor;
• an anode region made of a second conductivity type semiconductor;
• an anode electrode;
• a barrier region formed between the drift region and the anode region and made of the first conductivity type semiconductor having a concentration higher than that of the drift region;
• and
• a pillar electrode formed so as to extend between the barrier region and the anode electrode and contact the barrier region, and made of metal,
• a barrier height adjusting region formed so as to be located between the barrier region and the pillar electrode, and contact the barrier region and the pillar electrode,
• wherein the barrier height adjusting region includes at least one component selected from the group consisting of the second conductivity type semiconductor having a concentration lower than that of the anode region, the first conductivity type semiconductor having a concentration lower than that of the barrier region, and i-type semiconductor, and
• wherein the barrier height adjusting region and the pillar electrode are connected through a Schottky junction.

A semiconductor device comprising:

• a drain electrode;
• a drain region made of a first conductivity type semiconductor;
• a drift region made of the first conductivity type semiconductor;
• a body region made of a second conductivity type semiconductor;
• a source region made of the first conductivity type semiconductor;
• a source electrode;
• a gate electrode opposite to the body region between the source region and the drift region via an insulating film;
• a barrier region formed between the drift region and the body region, and made of a first conductivity type semiconductor having a concentration higher than that of the drift region;
• and
• a pillar electrode formed so as to be located between the barrier region and the source electrode and contact the source electrode, and made of metal;
• and
• a barrier height adjusting region formed so as to be located between the barrier region and the pillar electrode, and contact the barrier region and the pillar electrode,
• wherein the barrier height adjusting region includes at least one component selected from the group consisting of the second conductivity type semiconductor having a concentration lower than that of the body region, the first conductivity type semiconductor having a concentration lower than that of the barrier region, and an i-type semiconductor, and
• the barrier height adjusting region and the pillar electrode are connected through a Schottky junction.