Group-iii nitride semiconductor light-emitting element and manufacturing method therefor

A method of manufacturing a group-III nitride semiconductor light emitting element, comprising:

• a semiconductor layer forming process for growing a semiconductor layer including a light emitting layer, a p-type semiconductor layer and an n-type semiconductor layer on a grow substrate;
• a recess forming process for forming a recess on the semiconductor layer from the p-type semiconductor layer side to expose a portion of the n-type semiconductor layer;
• an n-contact electrode forming process for forming an n-contact electrode on the n-type semiconductor layer that is exposed to the recess;
• a p-contact electrode forming process for forming a p-contact electrode on the p-type semiconductor layer;
• a bonding process for bonding a laminate including a support substrate to a base material including the semiconductor layer from the position opposite to the growth substrate to form a bonding body;
• and
• a growth substrate removal process for removing the growth substrate from the bonding body,
• wherein, in the n-contact electrode forming process and the p-contact electrode forming process, in a case of being orthogonally projected on a plate surface of the support substrate, the p-contact electrode and the n-contact electrode are formed in a shape in which the orthogonally projected p-contact electrode and the orthogonally projected n-contact electrode are not overlapped with each other, and
• in the bonding process, the p-contact electrode and the n-contact electrode are bonded so as to be disposed at a position between the semiconductor layer and the support substrate.