Semiconductor light-emitting devices

A semiconductor light-emitting device comprising:

• a semiconductor region including a light-emitting structure having a first semiconductor layer, an active layer, and a second semiconductor layer;
• a first electrode layer contacting the first semiconductor layer;
• and
• a second electrode layer contacting the second semiconductor layer,
• at least one of the first electrode layer and the second electrode layer including a plurality of reflection metal layers,
• the plurality of reflection metal layers being spaced apart from one another and overlapping with one another,
• each of the plurality of reflection metal layers having a reflective surface contacting the semiconductor region.

A semiconductor light-emitting device, comprising:

• a semiconductor region including a light-emitting structure;
• and
• a first electrode structure including a first metal layer and a second metal layer spaced apart from each other,
• the first metal layer and the second metal layer contacting different areas of the semiconductor region,
• the second metal layer extends over the first metal layer, and
• the first metal layer and the second metal layer being configured to reflect light from the light-emitting structure.