Semiconductor light emitting device and light emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsYosuke AKIMOTO, Akihiro KOJIMA, Miyoko SHIMADA, Hideyuki TOMIZAWA, Yoshiaki SUGIZAKI, Hideto FURUYAMA
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AssigneeKabushiki Kaisha Toshiba
InventorsYosuke AKIMOTO, Akihiro KOJIMA, Miyoko SHIMADA, Hideyuki TOMIZAWA, Yoshiaki SUGIZAKI, Hideto FURUYAMA
Estimating the term…
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating film, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a second insulating film and a fluorescent material layer. The first electrode is provided in an emitting region of the semiconductor layer. The first electrode, the first insulating film, the first interconnection layer, the second interconnection layer, and the second insulating layer are configured to transmit radiated light of the light emitting layer.
A semiconductor light emitting device comprising:
A light emitting device comprising:
Dependencies are inferred from the claim text.