Semiconductor Light Emitting Device

A semiconductor light emitting device comprising:

• a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination;
• a first electrode supplying either electrons or holes to the plurality of semiconductor layers;
• a second electrode supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode;
• a non-conductive reflective film, which is formed on the second semiconductor layer, for reflecting light from the active layer towards the first semiconductor layer on the side of the growth substrate and includes a dielectric film and a distributed bragg reflector in order mentioned from the second semiconductor layer;
• and
• a light-transmitting film formed on the distributed bragg reflector as part of or separately from the non-conductive reflective film, wherein the light-transmitting film has a refractive index lower than an effective refractive index of the distributed bragg reflector.