Semiconductor light-emission device and manufacturing method

A method of manufacturing a semiconductor light-emission device, the method comprising:

• providing, in an electron barrier layer of the semiconductor light-emission device, a first region having a band gap of a fixed magnitude, the electron barrier layer being made of a III-V compound semiconductor and being inserted between a p-type conductive layer and an active layer of the semiconductor light-emission device, the p-type conductive layer being one or more layers each made of a III-V compound semiconductor, and the active layer being made of a III-V compound semiconductor;
• and
• providing, in the electron barrier layer, a second region that is provided in contact with a second interface of the first region, the first region being provided closer to the active layer than the second region in the electron barrier layer and having a first interface and the second interface that is located farther from the active layer than the first interface, and the second region having a band gap of a magnitude that is smaller than the magnitude of the band gap of the first region and becomes smaller from an interface with the first region of the second region towards an interface with the p-type conductive layer of the second region.