Semiconductor device

A semiconductor device comprising:

• a first cell;
• and
• a second cell, wherein
• each of the first cell and the second cell includes
• a first silicon carbide semiconductor layer of a first conductivity type,
• a first region of a second conductivity type provided in the first silicon carbide semiconductor layer,
• a second region of the first conductivity type provided in the first region,
• a second silicon carbide semiconductor layer which is provided on and in contact with the first silicon carbide semiconductor layer and is in contact with the first region and the second region,
• a first ohmic electrode which is in ohmic contact with the second region, and
• an insulating film provided on the second silicon carbide semiconductor layer,
• the first cell includes a gate electrode on the second silicon carbide semiconductor layer with the insulating film provided between the second silicon carbide semiconductor layer and the gate electrode, and
• the second cell includes no electrode configured to control an electric potential of the second silicon carbide semiconductor layer independently of an electric potential of the first ohmic electrode.