Back to results
US 2014/0231827 A1Published application
Semiconductor device and manufacturing method thereof
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha
InventorsYukihiko WATANABE, Sachiko AOI, Masahiro SUGIMOTO, Akitaka SOENO, Shinichiro MIYAHARA
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.
Claims6
A method of manufacturing a semiconductor device, the method comprising:
- forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer;
- siliciding the ohmic electrode;
- and
- forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment, wherein the second area is exposed where the ohmic electrode is not formed.
1 more element
A semiconductor device comprising:
- a silicon carbide layer;
- an ohmic electrode being in an ohmic contact with a first area on one of main surfaces of the silicon carbide layer;
- and
- a Schottky electrode being in an ohmic contact with a second area on the one of the main surfaces of the silicon carbide layer,
- wherein the silicon carbide layer comprises:
- a drift region of a first conductivity type, the drift region including an exposure portion exposed in the second area on the one of the main surfaces of the silicon carbide layer;
- a base region of a second conductivity type, the base region disposed above the drift region, exposed in the first area on the one of the main surfaces of the silicon carbide layer, and including portions that are spaced apart by the exposure region in between;
- and
- a source region of the first conductivity type, the source region surrounded by the base region and exposed in the first area on the one of the main surfaces of the silicon carbide layer.
6 more elements
Dependencies are inferred from the claim text.