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US 2014/0231820 A1Published application
Memory device using graphene as charge-trap layer and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-ho LEE, Hyun-jong CHUNG, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Jin-seong HEO
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Abstract
A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.
Claims14
A graphene memory comprising:
- a conductive semiconductor substrate;
- a source and a drain spaced apart from each other on the conductive semiconductor substrate;
- a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain;
- and
- a gate electrode on the graphene layer,
- wherein a Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.
3 more elements
Dependencies are inferred from the claim text.