AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE

A method of growing III-N material on a silicon substrate comprising the steps of:

• providing a single crystal silicon substrate;
• growing or depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate;
• growing or depositing a first layer of GaN on the surface of the rare earth oxide layer;
• growing or depositing an inter-layer of aluminum nitride (AlN) on the first layer of GaN;
• growing or depositing an additional layer of GaN on the surface of the layer of aluminum nitride;
• repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of GaN material n-times to reduce or engineer strain in a final GaN layer;
• and
• growing or depositing a cap layer of AlN on the surface of the final GaN layer.

A method of growing III-N material on a silicon substrate comprising the steps of:

• providing a single crystal silicon substrate;
• epitaxially depositing a single crystal layer of rare earth oxide on the silicon substrate, the rare earth oxide layer being substantially crystal lattice matched to the surface of the silicon substrate;
• epitaxially depositing a first layer of GaN on the surface of the rare earth oxide layer;
• epitaxially depositing an inter-layer of aluminum nitride (AlN) on the first GaN layer;
• epitaxially depositing an additional layer of GaN on the surface of the aluminum nitride inter-layer;
• repeating the steps of epitaxially depositing the inter-layer of aluminum nitride and the additional layer of GaN material n-times to reduce or engineer strain in each subsequent additional layer of GaN material and in a final GaN layer;
• and
• epitaxially growing or depositing a cap layer of AlN on the surface of the final GaN layer, the AlN cap layer further including growing or depositing one of and LED structure and an HEMT structure.