Iii-n material grown on alo/aln buffer on si substrate

A method of growing III-N material on a silicon substrate comprising the steps of:

• providing a single crystal silicon substrate;
• growing or depositing a buffer on the silicon substrate, the buffer including single crystal aluminum oxynitride adjacent the silicon substrate and aluminum nitride adjacent an upper surface of the buffer, the aluminum oxynitride being substantially crystal lattice matched to the surface of the silicon substrate;
• growing or depositing a first layer of III-N material on the upper surface of the buffer;
• growing or depositing an inter-layer of aluminum nitride (AlN) on the first layer of III-N material;
• growing or depositing an additional layer of III-N material on the surface of the layer of aluminum nitride;
• and
• repeating the steps of growing or depositing the inter-layer of aluminum nitride and the additional layer of III-N material n-times to reduce or engineer strain in a final III-N layer.

A method of growing III-N material on a silicon substrate comprising the steps of:

• providing a single crystal silicon substrate;
• epitaxially depositing a buffer on the silicon substrate, the buffer including single crystal aluminum oxynitride adjacent the silicon substrate and aluminum nitride adjacent an upper surface of the buffer, the aluminum oxynitride being substantially crystal lattice matched to the surface of the silicon substrate;
• epitaxially depositing a first layer of GaN on the upper surface of the buffer;
• epitaxially depositing an inter-layer of aluminum nitride (AlN) on the first GaN layer;
• epitaxially depositing an additional layer of GaN on the surface of the aluminum nitride inter-layer;
• repeating the steps of epitaxially depositing the inter-layer of aluminum nitride and the additional layer of GaN n-times to reduce or engineer strain in each subsequent additional layer of GaN to reduce or engineer strain in a final GaN layer;
• and
• epitaxially depositing a III-N layer on the final GaN layer, the III-N layer including one of an LED structure and an HEMI structure.