Thin film transistor and manufacturing method thereof

A thin film transistor, comprising:

• a gate electrode;
• a gate insulating layer disposed on the gate electrode;
• a semiconductor disposed on the gate insulating layer;
• an etch stopper disposed on a channel of the semiconductor;
• a source electrode disposed on the semiconductor;
• a drain electrode disposed on the semiconductor;
• and
• a conductive layer disposed directly on a first portion of the semiconductor that is not covered by the etch stopper,
• wherein the conductive layer is electrically connected to the source electrode or the drain electrode, and
• wherein at least one dimension of the etch stopper and the channel of the semiconductor are substantially the same.

A method of manufacturing a thin film transistor, comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer on the gate electrode;
• forming a semiconductor on the gate insulating layer;
• forming an etch stopper on a channel of the semiconductor;
• forming a source electrode on the semiconductor;
• and
• forming a drain electrode on the semiconductor,
• wherein at least one of the source electrode and the drain electrode does not overlap with the etch stopper, and
• wherein at least one dimension of the etch stopper and the channel of the semiconductor are substantially the same.

A method of manufacturing a thin film transistor, comprising:

• forming a gate electrode on a substrate;
• forming a gate insulating layer on the gate electrode;
• forming a semiconductor on the gate insulating layer;
• forming an etch stopper on a channel of the semiconductor;
• forming a conductive layer disposed directly on a portion of the semiconductor not covered by the etch stopper, the portion of the conductive layer being electrically connected to a source electrode or a drain electrode;
• forming the source electrode on the semiconductor;
• and
• forming the drain electrode on the semiconductor.