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US 2014/0231809 A1Published application
Methodology for fabricating isotropically recessed source regions of cmos transistors
AssigneeInternational Business Machines Corporation
InventorsNicholas C. Fuller, Steve Koester, Isaac Lauer, Ying Zhang
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Abstract
A Field Effect Transistor device includes a buried oxide layer, a silicon layer above the buried oxide layer, an isotropically recessed source region, and a gate stack comprising a gate dielectric, a conductive material, and a spacer.
Claims10
A Field Effect Transistor device, comprising:
- a buried oxide layer;
- a silicon layer above the buried oxide layer;
- an isotropically recessed source region;
- and
- a gate stack comprising a gate dielectric, a conductive material, and a spacer.
2 more elements
Dependencies are inferred from the claim text.