US 2014/0231804 A1Published application

Sensor and method for fabricating the same

AssigneeBeijing Boe Optoelectronics Technology Co., Ltd.

InventorsChangjiang Yan, Zhenyu Xie, Shaoying Xu, Tiansheng Li

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Abstract

A sensor and its fabrication method are provided, the sensor comprises: a base substrate (32), a group of gate lines (30) and a group of data lines (31) arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines (30) and the group of data lines (31), each sensing element comprising a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes (33, 34) are positioned between the active layer (36) and the gate electrode (38). The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Claims15

Dependent claims

A sensor, comprising:

a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein:
the TFT device comprises:
a gate electrode disposed on the base substrate and connected with a gate line;
a gate insulating layer disposed on the gate electrode and overlaying the base substrate;
a source electrode and a drain electrode disposed on the gate insulating layer and opposed to each other to form a channel, wherein the drain electrode is connected with a data line;
an ohmic layer disposed on the source electrode and the drain electrode;
and an active layer disposed on the ohmic layer and over the channel;
the photodiode sensing device comprises:
a receiving electrode disposed on the gate insulating layer and connected with the source electrode;
a photodiode disposed on the receiving electrode;
a transparent electrode disposed on the photodiode;
and a bias line disposed over the transparent electrode and connected with the transparent electrode.

9 more elements

A method for fabricating a sensor comprising:

forming a pattern of a gate line and a pattern of a gate electrode connected with the gate line on a base substrate, by using a first patterning process;
forming a gate insulating layer overlaying the base substrate, and forming a pattern of a source electrode and a drain electrode which are disposed on the gate insulating layer and over the gate electrode and opposed to each other to form a channel, a pattern of a receiving electrode connected with the source electrode, and a pattern of an ohmic layer disposed on the source electrode and the drain electrode, by using a second patterning process;
forming a pattern of an active layer on the ohmic layer and over the channel, a pattern of a photodiode on the receiving electrode and a pattern of a transparent electrode on the photodiode, by using a third patterning process;
forming a pattern of a first passivation layer and a pattern of a third via hole in the active layer and the ohmic layer, by using a fourth patterning process, wherein the first passivation layer has a first via hole over the drain electrode and a second via hole over the transparent electrode, and a position of the third via hole corresponds to that of the first via hole;
and
forming a pattern of a data line that is disposed on the first passivation layer and connects with the drain electrode through the first via hole and the third via hole, and a pattern of a bias line that is disposed on the first passivation layer and connects with the transparent electrode through the second via hole, by using a fifth patterning process.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/128,833Filed 3 Dec 2012
Priority: CN 201210262964.426 Jul 2012
Published: 21 Aug 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6732
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: bottom-gate only TFTs