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US 2014/0231746 A1Published application
Semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsJae Sung HYUN, Hyun Wook SHIM, Jin Young LIM
Life of this patent
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Abstract
A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer includes a first impurity region including a p-type impurity and a second impurity region including an n-type impurity. The first and second impurity regions are alternately repeated at least once.
Claims20
A semiconductor light emitting device, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer including a first impurity region including a p-type impurity and a second impurity region including an n-type impurity, the first and second impurity regions being alternately repeated at least once;
- and
- an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.
1 more element
A semiconductor light emitting device, comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer including a plurality of n-type impurity regions spaced apart from each other by a predetermined interval, the p-type semiconductor layer having a gradually varied p-type impurity concentration;
- and
- an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.
1 more element
A lighting device, comprising:
- a light emitting module including a circuit board and a light emitting device disposed on the circuit board;
- and
- a heat sink plate in direct contact with the light emitting module,
- wherein the light emitting device includes:
- an n-type semiconductor layer,
- a p-type semiconductor layer including a first impurity region including a p-type impurity and a second impurity region including an n-type impurity, the first and second impurity regions being alternately repeated at least once, and
- an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.