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US 2014/0231745 A1Published application
P-side layers for short wavelength light emitters
AssigneePalo Alto Research Center Incorporated
InventorsJohn E. Northrup, Bowen Cheng, Christopher L. Chua, Thomas Wunderer, Noble M. Johnson, Zhihong Yang
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Abstract
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
Claims34
A light emitting device, comprising:
- a p-side heterostructure comprising a short period superlattice (SPSL) including alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9 and each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN;
- an n-side heterostructure;
- and
- an active region configured to emit light disposed between the SPSL and the n-side hetero structure.
1 more element
A light emitting device, comprising:
- a p-side heterostructure comprising a short period superlattice (SPSL) comprising alternating layers of AlxhighGa1-highN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh<0.9;
- an n-side heterostructure;
- and
- an active region configured to emit light disposed between the SPSL and the n-side heterostructure, wherein the alternating layers cause modulation in a valence band potential in the SPSL and the modulation is approximately equal to an acceptor level energy of the p-type dopant.
1 more element
A light emitting device, comprising:
- a p-side heterostructure;
- an n-side heterostructure;
- an active region configured to emit light disposed between the p-side heterostructure and the n-side heterostructure;
- a metallic p-contact;
- and
- a p-contact layer disposed between the p-side heterostructure and the p-contact, the p-contact layer comprising AlzGa1-zN and having a thickness, D, where z has an S-shaped Al composition profile that varies over a substantial portion of the thickness of the p-contact layer.
3 more elements
A light emitting device, comprising:
- a p-side heterostructure comprising a short period superlattice (SPSL) comprising alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9;
- an n-side heterostructure;
- an active region configured to emit light disposed between the SPSL and the n-side heterostructure;
- a metallic p-contact;
- and
- a p-contact layer disposed between the p-side heterostructure and the p-contact, the p-contact layer comprising AlzGa1-zN and having a thickness, D, where z varies over a substantial portion of the thickness of the p-contact layer.
3 more elements
A light emitting device, comprising:
- a p-side heterostructure comprising a short period superlattice (SPSL);
- an n-side heterostructure;
- and
- an active region configured to emit light disposed between the SPSL and the n-side heterostructure, wherein the SPSL comprises a first portion and a second portion, the first portion proximate the active region and comprising a first number of alternating layers of Alx1highGa1-x1highN doped with a p-type dopant and Alx1lowGa1-x1lowN doped with the p-type dopant, the second portion comprising a second number of alternating layers of Alx2highGa1-x2highN doped with a p-type dopant and Alx2lowGa1-x2lowN doped with a p-type dopant, and wherein a thickness of each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
1 more element
A method of fabricating a light emitting device, comprising:
- growing an n-side heterostructure on a substrate;
- growing an active region on the n-side heterostructure;
- growing a short period superlattice (SPSL) proximate to the active region, comprising:
- growing alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9 and each layer of the SPSL having a thickness of less than or equal to about six bi-layers of AlGaN.
1 more element
Dependencies are inferred from the claim text.