Doped aluminum nitride crystals and methods of making them
AssigneeCrystal IS, Inc.
InventorsGlen A. Slack, Leo J. Schowalter
Life of this patent
Estimating the term…
Abstract
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
Claims17
-41. (canceled)
An extraction-activated bi-doped p-type AlN crystal doped with a plurality of VAlSi2N3 complexes.
A bi-doped, p-type AlN crystal having a mobility greater than approximately 25 cm2 V−1 s−1 at room temperature, the bi-doped AlN crystal being doped with both (i) a donor species comprising O and (ii) an acceptor species comprising C, wherein (i) both the donor species and the acceptor species occupy anion lattice sites in the AlN crystal and (ii) at least portions of the donor species and the acceptor species are present within the AlN crystal as Al2° C. compounds.
Dependencies are inferred from the claim text.