Near infrared light source in bulk silicon
AssigneeInsiava (Pty) Limited
InventorsMonuko Du Plessis, Alfons Willi Bogalecki
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Abstract
A light emitting device (10) comprises a body (12) of a semiconductor material having a first face (14) and at least one other face (16). At least one pn-junction (18) in the body is located towards the first face and is configured to be driven via contacts on the body into a light emitting mode. The other face (16) of the body is configured to transmit from the body light emitted by the at least one pn-junction (18) in the near infrared part of the spectrum and having wavelengths longer than 1 μm.
Claims15
A light emitting device comprising:
- a body of an indirect bandgap semiconductor material having a first face and at least one other face;
- at least one pn-junction light-emitting source in the body located towards the first face and configured to be driven via contacts on the body into a reverse biased breakdown light emitting mode;
- and
- the other face being configured to transmit from the body light emitted by the at least one pn-junction light source.
A method of fabricating a light emitting device, the method comprising the steps of:
- forming at least one pn-junction light source towards a first face of a body of an indirect bandgap semiconductor material;
- providing contacts on the body for driving the pn-junction light source into a reverse biased breakdown light emitting mode;
- and
- adapting another face of the body to transmit from the body light emitted by the pn-junction light source.
A method of coupling light comprising the steps of:
- generating light by driving a pn-junction light source located towards a first face of a body of an indirect bandgap semiconductor material into a reverse biased breakdown light emitting mode;
- and
- coupling generated light having a wavelength longer than 1 μm from the body through another face of the body.
Dependencies are inferred from the claim text.