Gas delivery for uniform film properties at uv curing chamber

A method of processing a wafer, comprising:

• introducing a cooling gas into a gas channel defined between a first window that is disposed adjacent to a UV radiation source and a second window that is disposed at a distance from the first window, the second window defining a plurality of openings such that the cooling gas introduced into the gas channel is received within a processing chamber, wherein a first number of the plurality of openings have a first size and a second number of the plurality of openings have a second size greater than the first size;
• curing a film disposed on wafer disposed within the processing chamber by energizing the UV light source such that UV radiation passes through the first and second windows toward an upper surface of the wafer;
• and
• removing gas from the processing chamber through a gas outlet that is in fluid communication with the processing chamber.

A UV curing system, comprising:

• an enclosure defining an interior;
• a UV radiation source disposed at an upper end of the interior;
• a first window disposed within the interior of the enclosure adjacent to the UV radiation source, the first window creating a barrier that separates the UV radiation source and a processing chamber disposed below the UV radiation source;
• a second window disposed within the interior of the enclosure at a distance from the first window to define a gas channel therebetween, the second window defining a plurality of openings such that the gas channel is in fluid communication with the processing chamber that is disposed below the second window, wherein a first number of the plurality of openings have a first size and a second number of the plurality of openings have a second size greater than the first size;
• a gas inlet configured to introduce a cooling gas into the processing chamber;
• and
• a gas outlet disposed at a bottom of the processing chamber and configured to remove gas from the processing chamber.