C particle dispersed fe-pt-based sputtering target
AssigneeJX Nippon Mining & Metals Corporation
InventorsShin-ichi Ogino, Atsushi Sato, Yuichiro Nakamura
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Abstract
Provided is a sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and the remainder being Fe. It is an object of the present invention to provide a high-density sputtering target that can produce a granular magnetic thin film without using any high-cost co-sputtering apparatuses and can also reduce the amount of particles generated during sputtering.
Claims17
A sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and Fe.
A sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, 0.5 mol % or more and 20 mol % or less of at least one oxide additive selected from SiO2, Cr2O3, CoO, Ta2O5, B2O3, MgO, and Co3O4, and the remainder being Fe.
A sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, 0.5 mol % or more and 20 mol % or less of at least one additional element selected from B, Ru, Ag, Au, and Cu;
- and the remainder being Fe.
Dependencies are inferred from the claim text.