Method for producing film member
AssigneeTokai Rubber Industries, Ltd.
InventorKensuke Sasai
Life of this patent
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Abstract
A film member includes a substrate formed of a resin film and an aluminium oxynitride film arranged on either, front or back sides of the substrate, in which the aluminium oxynitride film is composed of 39 at % to 55 at % of Al, 7 at % to 60 at % of O, and 1 at % to 50 at % of N. A method for producing the film member includes a pressure reduction step of arranging a substrate in a chamber of a sputtering deposition system such that the substrate faces a target made of aluminium and a deposition step of introducing a source gas including nitrogen and a carrier gas into the chamber and forming the aluminium oxynitride film on a deposition surface of the substrate in an atmosphere in which a ratio of an oxygen gas pressure to a nitrogen gas pressure in the chamber is not more than 20%.
Claims5
A method for producing a film member including:
- a substrate formed of a resin film;
- and an aluminium oxynitride (AlON) film arranged on at least one of a front side and a back side of the substrate, the method characterized by comprising:
- a pressure reduction step of arranging the substrate in a chamber of a sputtering deposition system such that the substrate faces a target made of aluminium and exhausting gas in the chamber to maintain a predetermined vacuum level in the chamber;
- and
- a deposition step of introducing a source gas including nitrogen and a carrier gas into the chamber and sputtering the target with plasma generated by ionization of the carrier gas at a predetermined vacuum level in an atmosphere in which a ratio of an oxygen gas pressure to a nitrogen gas pressure in the chamber is not more than 20%, to form the aluminium oxynitride film which is composed of 39 at % to 55 at % of Al, 7 at % to 60 at % of O, and 1 at % to 50 at % of N on a deposition surface of the substrate.
Dependencies are inferred from the claim text.