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US 2014/0230720 A1Published application
Direct band gap wurtzite semiconductor nanowires
AssigneeTechnische Universiteit Eindhoven
InventorsSimone Assali, Ilaria Zardo, Jozef Everardus Maria Haverkort, Erik Petrus Antonius Maria Bakkers
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Abstract
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.
Claims18
A method for wurtzite semiconductor growth, the method comprising:
- providing vapor phase epitaxy (VPE) precursors for a first composition including a Gallium (Ga) precursor as a group III species and a Phosphorus (P) precursor as a group V species;
- performing VPE of the first composition having a hexagonal crystal structure with a direct band gap.
Dependencies are inferred from the claim text.