Selective voltage binning within a three-dimensional integrated chip stack

Abstract

Systems and methods for selective voltage binning within a three-dimensional integrated chip stack. A method is provided that includes defining a correlation between at least two parameters. At least one parameter of the at least two parameters is from a first chip of a three-dimensional integrated chip stack and at least one parameter of the at least two parameters is from a second chip of the three-dimensional integrated chip stack. The method further includes generating a covariance matrix based on the at least two parameters. The method further includes calculating a new parameter or new parameter set using the covariance matrix. The method further includes performing statistical static timing analysis (SSTA) such that the new parameter or the new parameter set is propagated into the SSTA. The method further includes determining whether timing targets for the three-dimensional integrated chip stack are achieved.

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