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US 2014/0227983 A1Published application
Body-biased switching device
AssigneeTriQuint Semiconductor, Inc.
InventorsWilliam J. Clausen, James P. Furino, JR., Michael D. Yore
Life of this patent
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Abstract
Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a body-bias circuit may derive a bias voltage based on a radio frequency signal applied to a switch field-effect transistor and apply the bias voltage to the body terminal of the switch field-effect transistor.
Claims20
A circuit configured to switch radio-frequency (“RF”) signals, the circuit comprising:
- a field-effect transistor (“FET”) including a source terminal, a gate terminal, a drain terminal, and a body terminal;
- and
- a body-bias circuit coupled with the source terminal, the drain terminal and the body terminal, the body-bias circuit configured to:
- derive a negative bias voltage based on an RF signal applied to the FET;
- and
- provide the negative bias voltage to the body terminal when the FET is in an off state.
3 more elements
A wireless communication device comprising:
- a transceiver;
- an antenna;
- and
- a radio frequency (“RF”) front-end coupled with the transceiver and the antenna and configured to communicate signals between the transceiver and the antenna, the radio frequency front-end including a silicon-on-insulator switching device that has:
- a decoder configured to set a plurality of switch field-effect transistors (“FET”) in an off state or an on state;
- and
- a cell with a field-effect transistor (“FET”) of the plurality of FETs and a body-bias circuit, wherein the body-bias circuit is configured to provide a negative voltage to a body of the field-effect transistor when the FET is in an off-state, the negative voltage derived from an RF signal applied to the FET.
4 more elements
A method comprising:
- controlling, with a decoder circuit, a switch field-effect transistor (“FET”) to be in an off state;
- deriving, with a body-bias circuit, a negative bias voltage based on a radio-frequency (“RF”) signal applied to the switch FET while the switch FET is in the off state;
- and
- providing, by the body-bias circuit, the negative bias voltage to a body of the switch FET while the switch FET is in the off state.
1 more element
A circuit configured to switch radio-frequency (“RF”) signals, the circuit comprising:
- a field-effect transistor (“FET”) including a source terminal, a gate terminal, a drain terminal, and a body terminal;
- and
- a body-bias circuit having:
- a node coupled with the body terminal;
- a first resistor coupled with the drain terminal and the node;
- and
- a second resistor coupled with the source terminal and the node,
- wherein the body-bias circuit is configured to:
- derive a bias voltage based on an RF signal applied to the FET;
- and
- provide the bias voltage to the body terminal.
8 more elements
Dependencies are inferred from the claim text.