Conductive chemical mechanical planarization polishing pad
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChang-Sheng LIN, Hsin-Hsien LU
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChang-Sheng LIN, Hsin-Hsien LU
Estimating the term…
A polishing pad for polishing a substrate. The pad comprises a layer of material having an upper polishing surface and a lower surface interfacing with a proximate platen, the material comprising a mixture of a conductive polymer distributed in a structure of a dielectric polymeric material using predetermined relationships. Additional embodiments provide a pad having a layer of dielectric polymeric material with an upper polishing surface and a lower surface interfacing with a proximate platen. A first set of grooves filled with a conductive polymer extends from the upper polishing surface to the lower surface, the first set of grooves filled with a conductive polymer. A second set of shallower grooves provide for slurry flow over the upper polishing surface. The first and/or second set of grooves are provided in a predetermined pattern.
A polishing pad for polishing a substrate, the pad comprising a layer of material having an upper polishing surface and a lower surface interfacing with a proximate platen, the material comprising a mixture of a conductive polymer (CPY) distributed in a structure of a dielectric polymeric material, the structure defined by a first component (AX) and a second component (BZ) using the relationship:
A polishing pad for polishing a substrate, the pad comprising a layer of material having an upper polishing surface and a lower surface interfacing with a proximate platen, the material comprising a mixture of a conductive polymer (CPy) distributed in a structure of a dielectric polymeric material, the structure defined by a first component (AX) and a second component (BZ) using the relationship:
A polishing pad for polishing a substrate comprising:
Dependencies are inferred from the claim text.