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AssigneeUniversity of Central Florida Research Foundation, Inc.
InventorsLawrence Shah, Martin C. Richardson, Ilya Mingareev, Mark Ramme, Tobias Bonhoff, Pankaj Kadwani
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In a particular embodiment, a relatively high-energy thulium fiber laser operating at the wavelength λ=2 μm may be used to selectively modify a front and/or a back surface of silicon and gallium arsenide wafers. The processing regime was studied in terms of the process parameters variation, and the corresponding modification fluence thresholds were determined. The results revealed considerable differences in morphology between front and back surface modifications, and that the back surface modification threshold of Si is significantly higher than at the front surface. Basic analytic modeling and z-scan measurements were performed to study the absorption mechanisms. In a broader embodiment the processing regime is not specifically limited to a thulium fiber laser.
A materials processing apparatus comprising:
A material processing method comprising treating a material substrate with an output beam of a pulsed laser characterized by a pulse energy from about 1 nJ to about 2 mJ, a pulse time from about 50 ps to about 500 ns and a photon energy less than a bandgap energy of a material that comprises the material substrate, to provide a processed material substrate.
A material processing method comprising irradiating a front side of a semiconductor substrate with an output beam of a thulium fiber pulsed laser characterized by a pulse energy from about 1 nJ to about 2 mJ, a pulse time from about 50 ps to about 500 ns and a photon energy less than a bandgap energy of a semiconductor material that comprises the semiconductor substrate, to provide a processed semiconductor substrate processed on a backside of the processed semiconductor substrate while not damaging the front side of the processed semiconductor substrate.
Dependencies are inferred from the claim text.