Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsAtsushi SANO, Yoshiro HIROSE
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Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
Claims16
A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a first predetermined number of times, the cycle comprising:
- forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
- and
- forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
A substrate processing apparatus, comprising:
- a process chamber in which processing to a substrate is performed;
- a first precursor gas supply system configured to supply a first precursor gas containing boron and a halogen group into the process chamber;
- a second precursor gas supply system configured to supply a second precursor gas containing a predetermined element and an amino group into the process chamber;
- a control part configured to control the first precursor gas supply system and the second precursor gas supply system such that a thin film containing the predetermined element, boron, carbon, and nitrogen is formed on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle comprising:
- forming a first layer containing boron and the halogen group by supplying the first precursor gas to the substrate;
- and
- forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying the second precursor gas to the substrate and modifying the first layer.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:
- forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
- and
- forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.
Dependencies are inferred from the claim text.