Combinatorial Plasma Enhanced Deposition and EtchTechniques
AssigneeIntermolecular, Inc.
InventorsSunil Shanker, Tony P. Chiang, Chi-I Lang
Life of this patent
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Abstract
According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes.
Claims20
A method comprising:
- designating a first region and a second region on a surface of a substrate, wherein the substrate is disposed on a pedestal, wherein the first region corresponds to a first electrode embedded in the pedestal and the second region corresponds to a second electrode embedded in the pedestal;
- providing plasma gas to a first processing region above the first region of the substrate;
- connecting the first electrode to a power source;
- and
- creating a plasma in the first processing region and isolating the plasma from a second processing region above the second region of the substrate.
A method comprising:
- providing a substrate disposed on a pedestal, wherein the pedestal comprises at least two electrodes embedded therein;
- providing a showerhead above the pedestal;
- delivering plasma gas to a processing region between the showerhead and the pedestal;
- and
- creating a voltage difference between the showerhead and one of the at least two electrodes to create a plasma after the delivering of the plasma gas into the processing region, wherein the plasma is substantially contained in a first area of the substrate which corresponds with the one electrode of the at least two electrodes.
A method for processing a substrate, the method comprising:
- providing a substrate disposed on a pedestal, the pedestal comprising a first electrode and a second electrode embedded therein, wherein a first region of the substrate is positioned above the first electrode and a second region of the substrate is positioned above the second electrode;
- providing a showerhead above the pedestal;
- delivering a plasma gas to a processing region between the substrate and the showerhead;
- and
- selectively connecting a power source to one of the first electrode or the second electrode to create a voltage difference between the showerhead and the one of the first electrode or the second electrode to create a plasma after the delivery of the plasma gas to the processing region, the plasma being substantially contained above one of the first region or the second region of the substrate.
Dependencies are inferred from the claim text.