Method of Forming a Metal Contact Opening with a Width that is Smaller than the Minimum Feature Size of a Photolithographically-Defined Opening

A method of forming a semiconductor structure comprising:

• forming a first hard mask layer that touches and lies over an isolation layer, the isolation layer having a top surface, and touching and lying over a source structure and a drain structure;
• forming a second hard mask layer that touches and lies over the first hard mask layer, the second hard mask structure having a top surface and a bottom surface;
• forming a third hard mask layer that touches and lies over the second hard mask layer, the third hard mask layer having a top surface;
• forming a fourth hard mask layer that touches and lies over the third hard mask layer, the fourth hard mask layer having a top surface;
• forming a first patterned photoresist layer that touches and lies over the fourth hard mask layer;
• and
• forming a second patterned photoresist layer that touches and lies over the fourth hard mask layer, the first patterned photoresist layer and the second patterned photoresist layer exposing a number of uncovered regions on the top surface of the fourth hard mask layer.