Method for exposing a layer
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorErwin HACKER
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Abstract
A method for exposing a layer buried in a substrate via a trench having an insulated lateral wall and an insulated floor includes the steps of applying an oxide onto the substrate and anisotropic etching. Applying the oxide onto the substrate takes place at least in a region of the trench such that the oxide protrudes from an edge of the trench into the trench. The protruding oxide shields the insulated lateral wall of the trench when anisotropically etching at least the insulated floor of the trench.
Claims19
A method for exposing a layer buried in a substrate via a trench comprising an insulated lateral wall and an insulated floor, comprising:
- applying an oxide onto the substrate at least in a region of the trench such that the oxide protrudes from an edge of the trench into the trench;
- and
- anisotropically etching at least the insulated floor of the trench, the insulated lateral wall being shielded by the oxide protruding into the trench.
A method for exposing a layer buried in a substrate via a vertical electrical connection arranged in a trench, the trench comprising an insulated lateral wall and an insulated floor, comprising:
- applying an oxide onto the substrate at least in a region of the trench such that the oxide protrudes from an edge of the trench into the trench;
- anisotropically etching at least the insulated floor of the trench, the insulated lateral wall being shielded by the oxide protruding into the trench;
- and
- producing a contacting layer on the insulated lateral wall such that the contacting layer is in contact with the layer and the contacting layer extends from a surface of the substrate along the lateral wall to the layer.
Dependencies are inferred from the claim text.