Semiconductor device and process for producing the same
AssigneeFujitsu Semiconductor Limited
InventorsHIROSHI MORIOKA, JUSUKE OGURA, SERGEY PIDIN
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a contact structure is provided. The semiconductor device includes: a conductive region; a first film and a second film which are formed over the conductive region to realize a layer; and a contact electrode which extends through the layer to the conductive region, and is formed so as to replace a portion of the layer with a portion of the contact electrode, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer.
Claims9
A producing method of a semiconductor device, comprising:
- forming a conductive region;
- forming a first film and a second film over the conductive region to realize a layer;
- forming a contact hole extending to the conductive region through the layer so as to remove a portion of the layer, where the portion of the layer is constituted by only the first film, only the second film, or both of a portion of the first film and a portion of the second film, and the portion of the first film occupies a major part of the portion of the layer;
- and
- forming a contact electrode in the contact hole.
A producing method of a semiconductor device, comprising:
- forming a conductive region over a semiconductor structure;
- forming a first film over the conductive region to form a layer;
- removing a first part of the first film so as to leave a second part of the first film;
- forming a second film over the semiconductor structure after removing the first part of the first film;
- forming resist over a first part of the second film so that a second part of the second film is exposed;
- performing isotropic etching by using the resist as a mask so as to remove the second part of the second film;
- forming a contact hole which extends to the conductive region;
- and
- forming a contact electrode in the contact hole.
Dependencies are inferred from the claim text.