Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region

A method of forming a device, the method comprising:

• providing a substrate, the substrate comprising a dielectric region, a conductive region, and a molecular self-assembled monolayer;
• wherein the molecular self-assembled monolayer covers the dielectric region, and
• wherein the molecular self-assembled monolayer is absent from the conductive region;
• forming a capping layer over the substrate,
• wherein the capping layer is an electrically conductive material comprising one of a cobalt alloy, a nickel alloy, tungsten, tantalum, or tantalum nitride,
• wherein the capping layer is formed by one of a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process,
• wherein the capping layer covers the conductive region, and
• wherein the capping layer covers at least a portion of the dielectric region;
• removing at least a portion of the molecular self-assembled monolayer from the dielectric region,
• wherein the removing of the at least the portion of the molecular self-assembled monolayer from the dielectric region comprises removing the capping layer from the dielectric region;
• and
• forming a dielectric barrier layer over at least the dielectric region.