Shallow trench isolation integration methods and devices formed thereby

A method for forming a semiconductor device, comprising:

• etching a set of trenches in a substrate;
• forming a first liner layer over the set of trenches;
• forming a second liner layer over the first liner layer;
• filling the set of trenches over the second liner layer via an enhanced high aspect ratio process (eHARP);
• polishing and etching the semiconductor device after the filling;
• removing the second liner layer;
• and
• filling the set of trenches with a high density plasma (HDP).

A method for forming a semiconductor device, comprising:

• etching a set of trenches in a substrate;
• forming a shallow trench isolation (STI) layer, the STI layer comprising a first liner layer and a second liner layer
• filling the set of trenches over the second liner layer via an enhanced high aspect ratio process (eHARP);
• polishing and etching the semiconductor device after the filling;
• removing the second liner layer;
• filling the set of trenches with a high density plasma (HDP);
• polishing the HDP;
• and
• etching back the HDP.