Methods of Fabricating Semiconductor Devices Including Fin-Shaped Active Regions

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of fins by forming a plurality of first device isolating trenches in a substrate;
• defining a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches;
• forming a plurality of mask patterns repeatedly disposed at a predetermined pitch to define an active area group including at least one fin-type active area among the plurality of fin-type active areas;
• and
• forming a plurality of second device isolating trenches separated from each other with a width that is greater than a width of the plurality of first device isolating trenches in the substrate by etching the substrate and the first device isolating layer using the plurality of mask patterns as an etching mask.

A method of fabricating a semiconductor device, the method comprising:

• forming first trenches uniformly spaced at a first pitch in a substrate;
• forming a first device isolating layer in the first trenches to define fin-shaped active regions therebetween protruding from a surface of the first device isolating layer therein;
• and then
• forming second trenches in the substrate to define respective fin groups including ones of the fin-shaped active regions, wherein each of the fin-shaped active regions includes source/drain regions therein and a channel region therebetween.