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US 2014/0227851 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorUn Hee LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method for manufacturing the same are disclosed. An additional spacer is formed at a lateral surface of an upper part of the bit line so that the distance of insulation films between a storage node and a neighboring storage node contact plug is increased. Accordingly, the distance between the storage node and the neighboring storage node contact is guaranteed and a bridge failure is prevented.
Claims13
-9. (canceled)
A method for manufacturing a semiconductor device comprising:
- forming a bit line over a semiconductor substrate;
- forming a first conductive pattern over a first sidewall of the bit line, the first conductive pattern including a first lower pattern and a first upper pattern;
- forming a second conductive pattern over a second sidewall of the bit line;
- forming first spacer between the first sidewall of the bit line and the first upper pattern;
- and
- forming first and second storage nodes coupled to the first and the second conductive patterns, respectively.
3 more elements
A method for manufacturing a semiconductor device comprising:
- forming a bit line over a semiconductor substrate;
- forming first and second lower conductive patterns over first and second sidewalls of the bit line in such a manner that an upper portion of the first and second sidewall, respectively, of the bit line are exposed;
- forming a first spacer over the exposed upper portion of the first sidewall of the bit line;
- and
- forming first and second upper conductive patterns over the first and second lower conductive patterns so that the first spacer is disposed between the first upper conductive pattern and the first sidewall of the bit line.
2 more elements
21-24. (canceled)
Dependencies are inferred from the claim text.