Back to results
US 2014/0227849 A1Published application
Methods of trimming nanowire structures
AssigneeGlobalfoundries Inc.
InventorsNicholas V. LiCausi, Jeremy A. Wahl
Life of this patent
Estimating the term…
Abstract
One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an N-type doped region in the initial nanowire structure and performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein the final cross-sectional size is smaller than the initial cross-sectional size.
Claims29
A method of forming a device, comprising:
- forming an initial nanowire structure having an initial cross-sectional size;
- performing a doping diffusion process to form an N-type doped region in said initial nanowire structure;
- and
- performing an etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is smaller than said initial cross-sectional size.
1 more element
A method of forming a device, comprising:
- forming an initial nanowire structure having an initial cross-sectional size;
- performing a doping diffusion process to form an N-type doped region in said initial nanowire structure, wherein said doping diffusion process is performed at a temperature that falls within the range of about 600-1100° C. and wherein said doped region has a dopant concentration of N-type dopant material that falls within the range of about 1019-1021 atoms/cm3;
- and
- performing an etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is smaller than said initial cross-sectional size.
1 more element
A method of forming a device, comprising:
- forming an initial nanowire structure having an initial cross-sectional size;
- performing a doping diffusion process to form an N-type doped region in said initial nanowire structure, wherein said doping diffusion process is performed at a temperature that falls within the range of about 600-1100° C. and wherein said doped region has a dopant concentration of N-type dopant material that falls within the range of about 1019-1021 atoms/cm3;
- and
- performing a chlorine-based etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is about 20-80% smaller than said initial cross-sectional size.
1 more element
Dependencies are inferred from the claim text.