Back to results
US 2014/0227842 A1Published application
3d structured memory devices and methods for manufacturing thereof
AssigneeMicron Technology, Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Il Young Kwon, Jin Ho Bin
Life of this patent
Estimating the term…
Abstract
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.
Claims10
A method for forming an n+ region and a p+ region at a source/drain region, the method comprising:
- exposing a region of undoped channel material in a recess;
- forming the n+ region in the exposed region;
- forming a diffusion barrier material in the recess;
- forming the p+ region adjacent to the diffusion barrier material in the recess.
1 more element
Dependencies are inferred from the claim text.