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US 2014/0227840 A1Published application
3d non-volatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorHan-Soo JOO
Life of this patent
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Abstract
A non-volatile memory device having a string of a plurality of memory cells that are serially coupled, wherein the string of memory cells includes a plurality of second channels of a pillar type, a first channel coupling lower end portions of the plurality of the second channels with each other, and a plurality of control gate electrodes surrounding the plurality of the second channels.
Claims17
1-11. (canceled)
A method of fabricating a non-volatile memory device having a pillar type channel, comprising:
- forming a first trench by etching a substrate;
- forming a first channel by filling a first channel material in the first trench;
- stacking a plurality of first material layers and a plurality of second material layers over the substrate filled with the first channel;
- forming a plurality of second trenches by etching the plurality of the first material layers and the plurality of the second material layer that expose the first channel;
- and
- forming a plurality of second channels by filling a second channel material in the plurality of the second trenches and coupled lower end portions of the plurality of the second channels with each other.
3 more elements
Dependencies are inferred from the claim text.