Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming a first gate pattern and a second gate pattern adjacent to the first gate pattern in a first region of a semiconductor substrate;
• forming a third gate pattern in a second region of the semiconductor substrate:
• forming a first sidewall spacer on a sidewall of the first gate pattern, a second sidewall spacer on a sidewall of the second gate pattern, and a third sidewall spacer on a sidewall of the third gate pattern;
• implanting a first impurity into the first region of the semiconductor substrate using the first gate pattern, the first sidewall spacer, the second gate pattern, and the second sidewall spacer as a mask;
• implanting a second impurity into the second region of the semiconductor substrate using the third gate pattern and the third sidewall spacer as a mask;
• etching the semiconductor substrate in the second region using the third gate pattern and the third sidewall spacer as a mask to form a trench;
• forming a semiconductor layer in the trench;
• after forming the semiconductor layer, depositing a first insulating film over the first region and the second region;
• etching the first insulating film to form a fourth sidewall spacer on a side surface of the first sidewall spacer, a fifth sidewall spacer on a side surface of the second sidewall spacer, and a sixth sidewall spacer on a side surface of the third sidewall spacer in such a manner that the fourth sidewall spacer and the fifth sidewall spacer are in contact with each other between the first gate pattern and second gate pattern;
• implanting a third impurity into the first region of the semiconductor substrate using the first gate pattern, the first sidewall spacer, the fourth sidewall spacer, the second gate pattern, the second sidewall spacer, and the fifth sidewall spacer as a mask;
• implanting a fourth impurity into the second region of the semiconductor substrate using the third gate pattern, the third sidewall spacer and sixth sidewall spacer as a mask;
• and
• after implanting the third impurity and implanting the fourth impurity, removing the fourth sidewall spacer, the fifth sidewall spacer, and the sixth sidewall spacer.