Nitride based semiconductor device and method for manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsKiyeol PARK, Woochul JEON, Younghwan PARK
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Abstract
Disclosed herein is a nitride based semiconductor device including: a base substrate; an epitaxial growth layer disposed on the base substrate and generating a 2-dimensional electron gas in an inner portion thereof; and an electrode structure disposed on the epitaxial growth layer, wherein the electrode structure includes: a gate electrode; a source electrode disposed at one side of the gate electrode; and a drain electrode disposed at the other side of the gate electrode and having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas.
Claims6
1-8. (canceled)
A method for manufacturing a nitride based semiconductor device, comprising:
- preparing a base substrate;
- forming an epitaxial growth layer on the base substrate, the epitaxial growth layer generating a 2-dimensional electron gas in an inner portion thereof;
- and
- forming an electrode structure on the epitaxial growth layer,
- wherein the forming of the electrode structure includes:
- forming a gate electrode;
- forming a source electrode at one side of the gate electrode;
- and
- forming a drain electrode at the other side of the gate electrode, the drain electrode having an extension part extended to the inner portion of the epitaxial growth layer to contact the 2-dimensional electron gas.
Dependencies are inferred from the claim text.