Front Side Copper Post Joint Structure for Temporary Bond in TSV Application
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHon-Lin Huang, Ching-Wen Hsiao, Kuo-Ching Hsu, Chen-Shien Chen
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Abstract
A method of forming an integrated circuit structure is provided. The method includes providing a substrate, the substrate having a conductive pad thereon. A dielectric buffer layer is formed over at least a portion of the conductive pad, and an under-bump-metallurgy (UBM) is formed directly coupled to the conductive pad, wherein the UBM extends over at least a portion of the dielectric buffer layer. Thereafter, a conductive pillar is formed over the UBM, and one or more conductive materials are formed over the conductive pillar. The substrate may be attached to a carrier substrate using an adhesive.
Claims20
A method of forming an integrated circuit structure, the method comprising:
- providing a substrate, the substrate having one or more metallization layers thereon and one or more conductive vias extending into the substrate;
- forming one or more passivation layers over the one or more metallization layers;
- forming a post-passivation interconnect (PPI) over the one or more passivation layers, the PPI comprising a conductive pad;
- forming a dielectric buffer layer over at least a portion of the conductive pad;
- forming an under-bump-metallurgy (UBM) directly coupled to the conductive pad, the UBM extending over at least a portion of the dielectric buffer layer;
- forming a conductive pillar over the UBM;
- and
- forming one or more conductive materials over the conductive pillar.
A method of forming an integrated circuit structure comprising:
- providing a substrate, the substrate having a post-passivation interconnect (PPI) formed thereon;
- forming a conductive pillar in electrical contact with the PPI;
- and
- forming one or more conductive materials over the conductive pillar, a combined height of the conductive pillar and the one or more conductive materials being between about 25 μm and about 60 μm.
A method of forming an integrated circuit structure comprising:
- providing a substrate, the substrate having a conductive pillar formed thereon and one or more conductive materials over the conductive pillar;
- and
- attaching the substrate to a carrier substrate using an adhesive, the adhesive filling a gap between the substrate and the carrier substrate.
Dependencies are inferred from the claim text.