Using interrupted through-silicon-vias in integrated circuits adapted for stacking

A method of producing an integrated circuit stack, comprising:

• producing a plurality of integrated circuits, including, for each integrated circuit
• providing a substrate,
• providing on said substrate an active circuit and interconnect layer including a plurality of constituent metal layers,
• providing a plurality of vias extending through said substrate from said active circuit and interconnect layer to a surface of said substrate opposite said active circuit and interconnect layer,
• providing a plurality of bond pads on said surface and respectively axially aligned with said vias,
• electrically connecting said bond pads to said vias,
• providing a plurality of terminals on said active circuit and interconnect layer and respectively axially aligned with said vias,
• electrically connecting a first subset of said terminals to the associated vias, and
• providing a second subset of said terminals including one said terminal that is an electrically distinct node relative to the associated axially aligned via;
• stacking said integrated circuits one upon another;
• and
• electrically connecting said terminals of one said integrated circuit to the respective bond pads of another said integrated circuit that is adjacent said one integrated circuit in said stack.