Method of manufacturing light-emitting device

A method of manufacturing a light-emitting device, the method comprising:

• forming a compound semiconductor structure having a first compound semiconductor layer, an active layer, and a second compound semiconductor layer sequentially stacked on a substrate;
• forming a via-hole exposing a portion of the first compound semiconductor layer by etching the compound semiconductor structure from the second compound semiconductor layer;
• forming a first electrode layer connected to the first compound semiconductor layer within the via-hole;
• forming a second electrode layer connected to the second compound semiconductor layer;
• forming an insulating layer covering a top surface of the second electrode layer and covering an exposed surface of the compound semiconductor structure surrounding the first electrode layer, a top surface of the first electrode layer being exposed through the insulating layer;
• adhering a non-conductive substrate to the insulating layer and to the top surface of the first electrode layer by using a conducting adhesive layer, the conducting adhesive layer continuously extending on a top surface of the non-conductive substrate to cover the entire area of the top surface of the non-conductive substrate;
• exposing a first portion of the conducting adhesive layer and a second portion of the second electrode layer by removing portions of the substrate, the compound semiconductor structure, and the insulating layer;
• forming a first electrode connection layer connected to the first portion of the conducting adhesive layer;
• and
• forming a second electrode connection layer connected to the second portion of the second electrode layer.

A method of manufacturing a light-emitting device, the method comprising:

• forming a compound semiconductor structure by stacking a first compound semiconductor layer, an active layer, and a second compound semiconductor layer on a substrate;
• forming a first electrode layer and a second electrode layer, which are respectively electrically connected to the first compound semiconductor layer and the second compound semiconductor layer, on a top surface of the compound semiconductor structure;
• coating an insulating layer on the compound semiconductor structure, wherein a first top surface of the first electrode layer is exposed through the insulating layer and a second top surface of the second electrode is covered with the insulating layer;
• adhering a non-conductive substrate to the insulating layer and to the first top surface of the first electrode layer by using a conducting adhesive layer, wherein the conducting adhesive layer continuously extends on a top surface of the non-conductive substrate to cover the entire area of the top surface of the non-conductive substrate;
• exposing a first portion of the conducting adhesive layer and a second portion of the second electrode layer by removing portions of the substrate, the compound semiconductor structure, and the insulating layer;
• forming a first electrode connection layer connected to the first portion of the conducting adhesive layer;
• and
• forming a second electrode connection layer connected to the second portion of the second electrode layer.