Method of manufacturing light emitting element
AssigneeNichia Corporation
InventorsAkinori YONEDA, Shinji NAKAMURA, Akiyoshi KINOUCHI, Yoshiyuki AIHARA, Hirokazu SASA
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Abstract
A light emitting element for flip-chip mounting having a flat mounting surface which allows a decrease in the width of the streets of a wafer. In the light emitting element, the insulating member filling around the bumps and flattening the upper surface is formed with a margin of a region with a width which is equal to or larger than the width of the streets on the dividing lines, so that at the time of dividing the wafer along the dividing lines, the insulating member is not processed, which allows designing of the streets with a small width.
Claims12
A method of manufacturing a light emitting element comprising singulating by dividing along dividing lines to obtain light emitting elements respectively having a semiconductor structure including a first semiconductor layer and a second semiconductor layer stacked on a partial region on the first semiconductor layer, and electrodes respectively connected to the first semiconductor layer and the second semiconductor layer, the method comprising:
- forming the semiconductor structure;
- forming electrodes respectively on a first semiconductor layer and a second semiconductor layer of the semiconductor structure;
- forming an insulating member covering the semiconductor structure having the electrodes formed thereon except for a connecting region to electrically connect the electrodes with outside and a region including a dividing region having a predetermined width along the dividing lines, and
- along the dividing lines, singulating the semiconductor structure covered with the insulating member to obtain light emitting elements whose dividing region are removed respectively.
A method of manufacturing a light emitting element comprising singulating by dividing along dividing lines to obtain light emitting elements respectively having a semiconductor structure including a first semiconductor layer and a second semiconductor layer stacked on a partial region on the first semiconductor layer, and electrodes respectively connected to the first semiconductor layer and the second semiconductor layer, the method comprising:
- forming an insulating member covering the semiconductor structure having the electrodes formed thereon except for a connecting region to electrically connect the electrodes with outside and a region including a dividing region having a predetermined width along the dividing lines, and
- along the dividing lines, singulating the semiconductor structure to obtain individual light emitting elements;
- wherein in the forming an insulating member, at least after forming a mask on the dividing region, the semiconductor structure is covered with the insulating member, and after removing the insulating material to expose the mask from an upper surface side, the mask is removed to form the insulating member.
Dependencies are inferred from the claim text.