Process to Remove Film from Semiconductor Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChern-Yow Hsu, Shih-Chang Liu, Chia-Shiung Tsai
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Abstract
Embodiments of the present disclosure are a method of forming a semiconductor device, a method of forming an MRAM device, and a method of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a second layer over a first layer, and performing a first etch process on the second layer to define a feature, wherein the first etch process forms a film on a surface of the feature. The method further comprises performing an ion beam etch process on the feature, wherein the ion beam etch removes the film from the surface of the feature.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a second layer over a first layer;
- performing a first etch process on the second layer to define a feature, wherein the first etch process forms a film on a surface of the feature;
- and
- performing an ion beam etch process on the feature, wherein the ion beam etch removes the film from the surface of the feature.
A method of forming an magnetic random access memory (MRAM) device, the method comprising:
- forming a magnetic tunnel junction (MTJ) over a bottom electrode;
- forming a top electrode over the MTJ;
- patterning the top electrode and the MTJ to define a feature with a first etch process, wherein the first etch process forms a film on the feature of the top electrode and the MTJ;
- and
- performing an ion beam etch process on the feature of the top electrode and the MTJ, wherein the ion beam etch process removes the film.
A method of forming a semiconductor device, the method comprising:
- forming an opening in a substrate with a first etch process, wherein the first etch process forms a film on an interior surface of the opening;
- and
- performing an ion beam etch process in the opening, wherein the ion beam etch process removes the film.
Dependencies are inferred from the claim text.